ПРИГРАНИЧНЫЕ ЛОВУШКИ В НАНОРАЗМЕРНОМ ПОДЗАТВОРНОМ ДИЭЛЕКТРИКЕ ПОЛЕВОГО ТРАНЗИСТОРА
Аннотация
Ключевые слова
Литература
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Simeonov S. Charge profile at the oxide-semiconductor interface of MOS structure in accumulation. International Journal of Electronics, 2008, vol. 95, issue 1. Р. 1-10.
Terlinden N.M., Dingemans G., Vandalon V., Bosch R.H.E.C., Kessels W.M.M., Influence of the SiO2 interlayer thickness on the density and polarity of charges in Si/SiO2/Al2O3 stacks as studied by optical second-harmonic generation. Journal of Applied Physics, 2014, vol. 115, 033708, DOI: http://dx.doi.org/10.1063/1.4857075 DOI: 10.1063/1.4857075
DOI: https://doi.org/10.12731/wsd-2014-10-5
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(c) 2016 В мире научных открытий
ISSN 2658-6649 (print)
ISSN 2658-6657 (online)